ÖZDEMİR, O. Et Al. 2008. Instability phenomenon originated from the disordered layer of the plasma-deposited BN film/c-Si interface assessed through the MIS structure by admittance measurement. Semiconductor Science and Technology , vol.23 .

ÖZDEMİR, O., Anutgan, M., Aliyeva-Anutgan, T., Atilgan, I., & Katirciolu, B., (2008). Instability phenomenon originated from the disordered layer of the plasma-deposited BN film/c-Si interface assessed through the MIS structure by admittance measurement. Semiconductor Science and Technology , vol.23.

ÖZDEMİR, Orhan Et Al. "Instability phenomenon originated from the disordered layer of the plasma-deposited BN film/c-Si interface assessed through the MIS structure by admittance measurement," Semiconductor Science and Technology , vol.23, 2008

ÖZDEMİR, Orhan Et Al. "Instability phenomenon originated from the disordered layer of the plasma-deposited BN film/c-Si interface assessed through the MIS structure by admittance measurement." Semiconductor Science and Technology , vol.23, 2008

ÖZDEMİR, O. Et Al. (2008) . "Instability phenomenon originated from the disordered layer of the plasma-deposited BN film/c-Si interface assessed through the MIS structure by admittance measurement." Semiconductor Science and Technology , vol.23.

@article{article, author={Orhan ÖZDEMİR Et Al. }, title={Instability phenomenon originated from the disordered layer of the plasma-deposited BN film/c-Si interface assessed through the MIS structure by admittance measurement}, journal={Semiconductor Science and Technology}, year=2008}