MARIL, E. Et Al. 2015. On the temperature dependent forward bias current–voltage (I–V) characteristics in Au/2 graphene–cobalt doped (Ca3Co4Ga0.001Ox)/n-Si structure. Materials Science In Semiconductor Processing , vol.39 , 332-338.

MARIL, E., KAYA, A., ÇETİNKAYA, H. G. , Koçyiğit, S., & ALTINDAL, Ş., (2015). On the temperature dependent forward bias current–voltage (I–V) characteristics in Au/2 graphene–cobalt doped (Ca3Co4Ga0.001Ox)/n-Si structure. Materials Science In Semiconductor Processing , vol.39, 332-338.

MARIL, ELİF Et Al. "On the temperature dependent forward bias current–voltage (I–V) characteristics in Au/2 graphene–cobalt doped (Ca3Co4Ga0.001Ox)/n-Si structure," Materials Science In Semiconductor Processing , vol.39, 332-338, 2015

MARIL, ELİF Et Al. "On the temperature dependent forward bias current–voltage (I–V) characteristics in Au/2 graphene–cobalt doped (Ca3Co4Ga0.001Ox)/n-Si structure." Materials Science In Semiconductor Processing , vol.39, pp.332-338, 2015

MARIL, E. Et Al. (2015) . "On the temperature dependent forward bias current–voltage (I–V) characteristics in Au/2 graphene–cobalt doped (Ca3Co4Ga0.001Ox)/n-Si structure." Materials Science In Semiconductor Processing , vol.39, pp.332-338.

@article{article, author={ELİF MARIL Et Al. }, title={On the temperature dependent forward bias current–voltage (I–V) characteristics in Au/2 graphene–cobalt doped (Ca3Co4Ga0.001Ox)/n-Si structure}, journal={Materials Science In Semiconductor Processing}, year=2015, pages={332-338} }