Microelectronic Engineering, cilt.149, ss.166-171, 2016 (SCI İndekslerine Giren Dergi)
To investigate the effect of 2% graphene cobalt (GC)-doped (Ca3Co4Ga0.001Ox) interfacial layer on the main
electrical parameters, Au/n-Si (MS) Schottky barrier diodes (SBDs) were fabricated with and without
this inter-facial layer. Using forward and reverse bias current–voltage (I–V) measurements, selected electrical
parameters of these diodes were obtained and compared at room temperature. The energy density distribution
profiles of the surface states (Nss) were obtained from the forward-bias I–V data by taking into account the
voltage-dependent effective barrier height (Φe) and ideality factor (n(V)). The value of Nss for the MPS-type
diode is one order of magnitude lower than that of the MS diode. These results indicated that the 2% GC-doped
(Ca3Co4Ga0.001Ox) interfacial layer prevents reaction and inter-diffusion between Au and n-Si as well as
passivating the active dangling bonds at the semiconductor surface. In addition, the voltage-dependent
profile of the resistance (Ri) was also obtained for the two diodes from the I–V data using Ohm's law. In both
the MS- and MPS-type diodes, an apparent exponential increase in Nss was observed from the mid-gap toward
the bottom of the Ec. The experimental results show that the existence of Nss, Rs, and the interfacial layer has a
great effect on the electrical characteristics of these structures. The value of the depletion layerwidthwas obtained
from C–V measurements at 300 kHz for the two diodes. The obtained results show that the GC-doped
(Ca3Co4Ga0.001Ox) interfacial layer considerably enhances the diode performance.