On Correlation between Visible-Near-Infrared Transmittance Spectra and Structural Properties of Plasma Deposited Nanocrystalline Silicon Thin Films


ANUTGAN T. , Gokdogan G. K.

9th International Physics Conference of the Balkan-Physical-Union (BPU), İstanbul, Türkiye, 24 - 27 Ağustos 2015, cilt.1722 identifier identifier

  • Cilt numarası: 1722
  • Doi Numarası: 10.1063/1.4944291
  • Basıldığı Şehir: İstanbul
  • Basıldığı Ülke: Türkiye

Özet

Visible-near-infrared transmittance (T) spectra is correlated with the structural properties of hydrogenated nanocrystalline silicon (nc-Si:H) thin films, produced by plasma enhanced CVD (PECVD) under various RF power densities (100-444 mW/cm(2)), various substrate temperatures (80-200 degrees C), at different regions of the PECVD electrode (center/edge). It is found that for the highly crystalline films there is downward deviation of maximum T envelope curve (T-M) from the glass substrate T (T-substrate) in 650-900 nm region, and it is linearly proportional to grazing angle XRD (GAXRD) (111) peak height. Field emission SEM (FE-SEM) surface reveals conglomerates for these films. T-M approximate to T-substrate for the films with low GAXRD (111) peak height or fully amorphous samples, which have partially or fully smooth FE-SEM film surface, respectively. The effect of each film structural property (surface roughness, columns, incubation layer, etc.) on the observed deviation of T-M from T-substrate is considered.