Forward bias capacitance spectroscopy for characterization of semiconductor junctions: Application to a-Si:H p-i-n diode


Anutgan M., Atilgan I.

APPLIED PHYSICS LETTERS, cilt.102, 2013 (SCI İndekslerine Giren Dergi) identifier identifier

  • Cilt numarası: 102 Konu: 15
  • Basım Tarihi: 2013
  • Doi Numarası: 10.1063/1.4802275
  • Dergi Adı: APPLIED PHYSICS LETTERS

Özet

The anomalous capacitance-frequency (C-f) behavior of hydrogenated amorphous silicon (a-Si:H) p-i-n diode is studied under different forward bias voltages. Instead of the negative capacitance part of the spectra, the positive part is analyzed, where the traditional charge modulation rather than their transport or their recombination dominates the reactive current. Since the physics of the charge modulation under a particular bias is directly related to the depth and the density of the relevant gap states, the forward bias voltage scanned C-f curves are used to estimate the energy distribution of the density of states within the forbidden gap. (C) 2013 AIP Publishing LLC [http://dx.doi.org/10.1063/1.4802275]