Frequency-Dependent Admittance Analysis of the Metal-Semiconductor Structure With an Interlayer of Zn-Doped Organic Polymer Nanocomposites


TECİMER H. , TAN S. O. , ALTINDAL Ş.

IEEE TRANSACTIONS ON ELECTRON DEVICES, cilt.65, ss.231-236, 2018 (SCI İndekslerine Giren Dergi) identifier identifier

  • Cilt numarası: 65 Konu: 1
  • Basım Tarihi: 2018
  • Doi Numarası: 10.1109/ted.2017.2778023
  • Dergi Adı: IEEE TRANSACTIONS ON ELECTRON DEVICES
  • Sayfa Sayıları: ss.231-236

Özet

The capacitance-voltage (C-V) and conductance-voltage (G/omega-V) data for Al/(0.07Zn-doped polyvinyl alcohol)/p-Si structure have been performed (at +/- 6-V biases) in a frequency interval of 1-400 kHz at room temperature. Utilizing form conductance method, N-ss values were specified from admittance measurements. The reason of higher C and G values obtained at lower frequencies was ascribed to the surface states located atMS interface and insulator layer. The increment at capacitance and conductance was occurred in consequence of the ac signal that followed easily by the surface states at these lower frequencies. The surface states existence also generates peaks at conductance versus logarithm of frequency (Gp/omega-log(f)) plots under distinct voltage values. The acquired values of Nss and relaxation time (tau) are in the interval of 1.94 x 10(14)-1.67 x 10(14) eV(-1).cm(-2) and 2.81 x 10(-3)-1.30 x 10(-5) s, respectively.