The effect of (PVP-Cu2Te) organic interlayer on the electrical parameters of Al/p-Si Schottky barrier diodes (SBDs) at room temperature

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Marıl E.

PHYSICA B-CONDENSED MATTER, cilt.20, no.412732, ss.30711, 2020 (SCI Expanded İndekslerine Giren Dergi)

  • Cilt numarası: 20
  • Basım Tarihi: 2020
  • Sayfa Sayıları: ss.30711


In the presented study, firstly the microstructural features of the PVP-Cu2Te interlayer

was evaluated by employing XRD and SEM approaches and the PVP-Cu2Te is formed on the

p-Si wafer. Secondly, both the forward and reverse biases current-voltage and

capacitance/conductance-frequency characteristics of the prepared Al/p-Si (MS) and

Al/(PVP-Cu2Te)/p-Si (MPS) structures have been analyzed to compare the organic interlayer

effect. Basic electrical parameters for reverse-saturation current (Io,), ideality factor (n), and

zero-bias BH (ΦBo) were calculated as 2.3x10-6 A, 2.38, and 0.576 eV for MS and 2.2x10-8 A,

1.85, and 0.692 eV for MPS structures, respectively. Apparently, Io value for MPS is almost

two order lower than MS structure. Besides, organic interlayer usage enhances the

performance of MPS structure in respect of high BH, high-rectifying ratio, low-series (Rs)

resistance, and low-leakage current. When the experimental and theoretical field-lowering

coefficients compared, Poole-Frenkel emission (PFE) is dominated for two structures at

reverse bias zone.