Admittance measuring methods were applied for the dielectric characterization of a fabricated metal-semiconductor structure, which has a 150-nm polymer interlayer doped with Zn. The components of complex electric modulus and dielectric constant, loss tangent, and the ac electric conductivity parameters of this structure were calculated at room temperature. Distinct frequencies and applied biases lead to extreme changes in all acquired parameters. This alteration was seen as an increment in dielectric constant and loss tangent in view of surface states presence and dipole polarizations. The frequency increment also leads to an increase in electric modulus related with the dielectric relaxation of the polarizations and dipoles. In addition to these results, comparing with a 50-nm interlayered structure, the increment in the thickness of the interlayer increases the dielectric constant and electric modulus and reveals capacitor properties of the structure.