Instability phenomenon originated from the disordered layer of the plasma-deposited BN film/c-Si interface assessed through the MIS structure by admittance measurement


ÖZDEMİR O., Anutgan M. , Aliyeva-Anutgan T. , Atilgan I., Katirciolu B.

Semiconductor Science and Technology, cilt.23, 2008 (SCI Expanded İndekslerine Giren Dergi) identifier