Capacitance-Voltage (C-V) and Conductance-Voltage (G/𝜔-V) Characteristics Before and After Irradiation in Au/n-Si/Ag Schottky Barrier Diodes (SBDs)


Durmuş P., Kaymaz A. , Altındal Ş.

International Natural Science, Engineering and Materials Technology Conference (NEM-2019), İstanbul, Türkiye, 9 - 10 Eylül 2019, ss.9-14

  • Basıldığı Şehir: İstanbul
  • Basıldığı Ülke: Türkiye
  • Sayfa Sayıları: ss.9-14

Özet

It is important to evaluate the capacitance-voltage (C-V) and conductance-voltage (G/𝜔-V) characteristics of Schottky barrier diodes (SBDs) or such similar semiconductor-based structures in order to investigate the response of these structures after exposure them to the 60Co-𝛾-irradiation. Therefore, in this study, the C-V and G/𝜔-V measurements of the Au/n-Si/Ag (MS) structure which have prepared is performed at enough high frequency (500 kHz) before and after 60 kGy irradiation. The frequency was selected as 500 kHz to eliminate the interface states caused by the fabrication stage, so that the effects of radiation can be accurately evaluated. For this aim, C-V and G/𝜔-V measurements were performed before and after 60 kGy irradiation at room temperature. Thus, the main diode parameters such as diffusion potential (VD), doping concentration of donor atoms (ND), Fermi energy level (EF), maximum electric field (Em), depletion layer width (WD) and barrier height (𝛷B) were calculated from the intercept and slope of the reverse bias C-2 -V plots before and after 60 kGy irradiation. Experimental results show that all these parameters vary depending on radiation because of the radiation induces different life-time of surface states and also it causes to be restructured and reordered of them.