Effect of RF Power Density on Micro- and Macro-structural Properties of PECVD Grown Hydrogenated Nanocrystalline Silicon Thin Films

Gokdogan G. K. , ANUTGAN T.

9th International Physics Conference of the Balkan-Physical-Union (BPU), İstanbul, Türkiye, 24 - 27 Ağustos 2015, cilt.1722 identifier identifier

  • Cilt numarası: 1722
  • Doi Numarası: 10.1063/1.4944290
  • Basıldığı Şehir: İstanbul
  • Basıldığı Ülke: Türkiye


This contribution provides the comparison between micro-and macro-structure of hydrogenated nanocrystalline silicon (nc-Si:H) thin films grown by plasma enhanced chemical vapor deposition (PECVD) technique under different RF power densities (P-RF: 100-444 mW/cm(2)). Micro-structure is assessed through grazing angle X-ray diffraction (GAXRD), while macro-structure is followed by surface and cross-sectional morphology via field emission scanning electron microscopy (FE-SEM). The nanocrystallite size (similar to 5 nm) and FE-SEM surface conglomerate size (similar to 40 nm) decreases with increasing P-RF, crystalline volume fraction reaches maximum at 162 mW/cm(2), FE-SEM cross-sectional structure is columnar except for the film grown at 162 mW/cm(2). The dependence of previously determined 'oxygen content-refractive index' correlation on obtained macro-structure is investigated. Also, the effect of P-RF is discussed in the light of plasma parameters during film deposition process and nc-Si: H film growth models.