Investigation of Gamma Irradiation Effects on The Current-Voltage Characteristics of Au/n-Si/Ag Schottky Diodes (SDs)

Kaymaz A. , Altındal Ş., Tecimer H.

6th International Conference on Materials Science and Nanotechnology For Next Generation (MSNG-2019), Niğde, Türkiye, 16 - 18 Ekim 2019, ss.416-419

  • Basıldığı Şehir: Niğde
  • Basıldığı Ülke: Türkiye
  • Sayfa Sayıları: ss.416-419


The effects of 60Co (𝛾-ray) irradiation on the electrical properties of Au/n-Si/Ag Schottky diodes (SDs) have been investigated by using current-voltage (I-V) measurements at room temperature. Au/n-Si/Ag SDs were exposed to dose 60 kGy irradiation to see the effects of 60Co (𝛾-ray) on the fundamental electrical parameters of SDs such as zero bias barrier height (𝛷B0), ideality factor (n), series resistance (Rs) and shunt resistance (Rsh). These parameters have been calculated before and after irradiation by using the reverse and forward bias I-V measurements at room temperature. It is obtained that the barrier height and series resistance values increase while the ideality factor and shunt resistance values decrease after exposure the SDs to 𝛾-ray source. On the other hand, the rectifying ratio values of SDs for before and after irradiation have been obtained as 276 and 36 respectively, at (± 3 V). In this case, experimental results confirm that 𝛾-ray irradiation have significant effect on the electrical properties of SDs.